Systematic benchmarking system and method for standardized data creation, analysis and comparison of semiconductor technology node characteristics

ABSTRACT

One aspect provides a method of standardized data creation and analysis of semiconductor technology node characteristics. In one embodiment, the method includes: (1) designing at least one representative benchmark circuit, (2) establishing standard sensitization and measurement rules for delay and power for the at least one representative benchmark circuit and across corners in the technology nodes, (3) performing a simulation by sweeping through a range of values and at predetermined intervals across the corners, (4) extracting data from the simulation and (5) parsing and interpreting the data to produce at least one report.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application Ser.No. 61/126,881, filed by Parker, et al., on May 7, 2008, entitled “ANovel Paradigm for Optimizing Performance, Power, Area and/or Yield inIntegrated Circuits,” commonly assigned with the invention andincorporated herein by reference. This application is also related toU.S. Non-Provisional Application Ser. No. [Attorney Docket No. PARKER4-4-4-43-1, IDS #126787] filed by Parker, et al., on even date herewith,entitled “Methods for Designing Integrated Circuits Employing VoltageScaling and Integrated Circuits Designed Thereby” and U.S.Non-Provisional Application Ser. No. [Attorney Docket No. JAMANN 2-6-7,IDS #126827] filed by Jamann, et al., on even date herewith, entitled “ASystematic, Normalized Metric for Analyzing and Comparing OptimizationTechniques for Integrated Circuits Employing Voltage Scaling andIntegrated Circuits Designed Thereby,” commonly assigned with theinvention and incorporated herein by reference.

TECHNICAL FIELD

This application is directed, in general, to a integrated circuits (ICs)and, more specifically, to a systematic benchmarking system and methodfor standardized data creation, analysis and comparison of semiconductortechnology node characteristics.

BACKGROUND

Conserving resources, including energy, has become a pre-eminentobjective in today's world. Manufacturers of ICs are sensitive to theneed to improve the energy efficiency of their products. Those skilledin the pertinent art are aware that various measures may be taken in anelectronic circuit to reduce its power consumption. One measure is touse cells (i.e., logic elements including devices, e.g., transistors)that leak less current when turned off. Another measure is to use alower voltage to drive the cells. Unfortunately, using lower leakagecurrent cells or lower drive voltages almost always reduces the speed atwhich signals propagate through the circuit. Consequently, the circuitmay not operate as fast as needed or desired.

Area and yield are also important considerations in circuit design. ICfabrication cost generally decreases as IC substrate (“die”) sizedecreases. Increasing yield means decreasing scrap, which by definitionreduces overall IC fabrication cost.

Circuit designers use electronic design automation (EDA) tools, acategory of computer aided design (CAD) tools, to create a functionalcircuit design, including a register transfer logic (RTL representation)representation of the functional circuit design, generate a “netlist”from the RTL representation, and synthesize a layout from the netlists.Synthesis of the layout involves simulating the operation of the circuitand determining where cells should be placed and where the interconnectsthat couple the cells together should be routed. EDA tools allowdesigners to construct a circuit, simulate its performance, determineits power consumption and area and predict its yield using a computerand without requiring the costly and lengthy process of fabrication. EDAtools are indispensable for designing modern ICs, particularlyvery-large-scale integrated circuits (VSLIs). For this reason, EDA toolsare in wide use.

One such EDA tool performs timing signoff. Timing signoff is one of thelast steps in the IC design process and ensures that signal propagationspeed in a newly-designed circuit is such that the circuit will operateas intended. Signals that propagate too slowly through the circuit causesetup violations; signals that propagate too quickly through the circuitcause hold violations. Setup or hold violations frustrate the logic ofthe circuit and prevent it from performing the job it was designed todo.

Timing signoff is performed with highly accurate models of the circuitunder multiple sets of assumptions regarding expected variations, called“PVT corners.” Process-voltage-temperature (PVT) PVT corners are basedon assumptions regarding variations in device operation from one IC toanother, drive voltage and operating temperature. Resistance-capacitance(R, C, or RC) PVT corners are based on assumptions regarding variationsin one or both of interconnect resistance and capacitance from one IC toanother. Conventional timing signoff identifies setup and holdviolations in a “slow” PVT corner (in which process variations areassumed to yield relatively slow-switching devices, and drive voltageand operating temperature are such that device switching speeds aretheir slowest) and a “worst” RC corner (in which process variations areassumed to yield interconnects having relatively high resistance andcapacitance). Conventional timing signoff also identifies holdviolations in a “fast” PVT corner (in which process variations areassumed to yield relatively fast-switching devices, and drive voltageand operating temperature are such that device switching speeds aretheir fastest) and a “best” RC corner (in which process variations areassumed to yield interconnects having relatively low resistance andcapacitance). Conventional signoff timing also takes on-chip variations(OCV), which are process variations occurring over the area of a givenIC, into account using statistical methods. The fast PVT and best RCcorner are sometimes jointly referred to as a fast-fast (FF) orbest-case fast (BCF) corner, and the slow PVT and worst RC corner aresometimes jointly referred to as a slow-slow (SS) or worst-case slow(WCS) corner. Various PVT and RC corners may also be defined wheredevices and interconnects are most often fabricated and operated. Thosecorners may be called typical-typical (TT) corners.

Thus a fundamental tradeoff exists among speed and power consumption.Further considerations involve speed, power consumption, area and yield.These force the circuit designer to employ EDA tools, particularlytiming signoff, to strike a delicate balance. Tempering the designer'szeal are the above-described process and environmental variations towhich every production circuit is subject. These variations increase thedegree to which the designer must ensure that production circuits workunder real-world operating conditions and therefore the complexity oftiming signoff.

Further complicating the designer's task is the difficulty ofdetermining the consequences of design choices, particularly when theyinvolve different technology nodes or technology nodes. In other words,a designer may not have the information needed to make optimal decisionsregarding the technology node or nodes to employ to fabricate aparticular IC design.

SUMMARY

One aspect provides a method of standardized data creation and analysisof semiconductor technology node characteristics. In one embodiment, themethod includes: (1) designing at least one representative benchmarkcircuit, (2) establishing standard sensitization and measurement rulesfor delay and power for the at least one representative benchmarkcircuit and across corners in the technology nodes, (3) performing asimulation by sweeping through a range of values and at predeterminedintervals across the corners, (4) extracting data from the simulationand (5) parsing and interpreting the data to produce at least onereport.

Another aspect provides a method of standardized data creation andanalysis of semiconductor technology node characteristics. In oneembodiment, the method includes: (1) designing representative benchmarkcircuits for a clock path, a data path and a flip-flop path, (2)establishing at least one standard sensitization and measurement rulefor delay and power for the representative benchmark circuits and acrosscorners in the technology nodes, (3) performing a simulation by sweepingthrough a range of values and at predetermined intervals across thecorners, (4) extracting data from the simulation, (5) writing the datato a databank and (6) parsing and interpreting the data to produce atleast one report.

Yet another aspect provides a method of designing an integrated circuit.In one embodiment, the method includes: (1) generating a functionaldesign for the integrated circuit, (2) determining performanceobjectives for the integrated circuit, (3) determining an optimizationtarget voltage for the integrated circuit, (4) determining whether theintegrated circuit needs voltage scaling to achieve the performanceobjectives at the optimization target voltage and, if so, whether theintegrated circuit is to employ static voltage scaling or adaptivevoltage scaling, (5) using the optimization target voltage to synthesizea layout from the functional integrated circuit design that meets theperformance objectives by employing standardized data created bydesigning at least one representative benchmark circuit, establishingstandard sensitization and measurement rules for delay and power for theat least one representative benchmark circuit and across corners in thetechnology nodes, performing a simulation by sweeping through a range ofvalues and at predetermined intervals across the corners, extractingdata from the simulation, and parsing and interpreting the data toproduce at least one report and (6) performing a timing signoff of thelayout at the optimization target voltage.

BRIEF DESCRIPTION

Reference is now made to the following descriptions taken in conjunctionwith the accompanying drawings, in which:

FIG. 1 is a graph of device drive voltage and device speed showing, inparticular, traditional PVT corners with respect to an IC that does notemploy voltage scaling;

FIG. 2 is a graph of device drive voltage and device speed showing, inparticular, PVT corners relevant to voltage scaling;

FIG. 3 is a graph of device drive voltage and device speed showing, inparticular, performance failure, hold/hazard failure and safe operatingzones for an IC employing voltage scaling;

FIG. 4 is a flow diagram of one embodiment of a method of standardizeddata creation, analysis and comparison of semiconductor technology nodecharacteristics;

FIG. 5 is a pair of contour plots for one example of a device fabricatedaccording to 65 nm and 40 nm technologies, respectively;

FIG. 6 is a set of contour plots of high, standard and low thresholdvoltage devices at FF, TT and SS corners; and

FIG. 7 is a flow diagram of one embodiment of a method of designing anIC employing voltage scaling that uses standardized data to gauge thedegree of optimization.

DETAILED DESCRIPTION

Various embodiments of novel methods to be described below providecomprehensive, relevant data regarding the characteristics of differenttechnology nodes advantageously to improve the degree to which the ICdesign process may be optimized. A technology node may refer, forexample, to the scale (e.g., 40 nm, 65 nm or 100 nm) of the processemployed to fabricate an IC or the substrate material (e.g., silicon,gallium arsenide or flexible substrate) interconnect material (e.g.,metal or conductive polymer) or device type (e.g., transistor-transistorlogic, or TTL, n-type or p-type metal-oxide semiconductor, or NMOS orPMOS, complementary metal-oxide semiconductor, or CMOS, bipolartransistor or field-effect transistor, or FET) employed in the IC.

As those skilled in the pertinent art understand, decisions regardingwhich technology node is to be employed in the design of an IC can onlybe made with some reference to the characteristics of the technologynodes that constitute the alternative choices. Representative devicesare fabricated using each technology node and tested to generate thedata that define the characteristics. Unfortunately, conventionaltechniques for analyzing the characteristics of different technologynodes are ad-hoc, providing only an incomplete view of keycharacteristics of the technologies. Moreover, the conventionaltechniques fail to provide a consistent framework for comparing thecharacteristics of different technology nodes. Described herein aremethods that provide a comprehensive framework and tool-set foranalyzing and comparing the characteristics of technology nodes. In someembodiments, a full sweep spanning relevant corners is performed ondevices belonging to different technology nodes to generate astandardized databank, and contour analysis is performed on the data inorder to understand each technology node relative to the other(s).

Voltage scaling is a technique whereby the drive voltage to a particularIC is modulated to one or more particular values such that the IC canfunction properly. Voltage scaling is particularly suited to compensatefor process variations. Static voltage scaling may be performed at thefactory (e.g., during calibration) or before the IC begins normaloperation (e.g., during powerup initialization). In contrast, adaptivevoltage scaling (AVS) is performed continually while the IC is in normaloperation and particularly effective at compensating for temperaturevariations and device aging as well as process variations. ICs can haveone or more domains, each having its own voltage regulator. Drivevoltage can therefore be modulated separately in each domain, allowingcompensation for OCV to be carried out as well.

While voltage scaling (including AVS) is known, it has heretofore beenused only to compensate for process and temperature variations and agingin an IC that has been designed by a conventional method. What has notbeen realized until now, however, is that voltage scaling has thepotential to change the fundamental theory under which an IC operates,and that, accordingly, the method by which an IC is designed may betransformed to take full advantage of the benefits of voltage scaling.Consequently, introduced herein are novel methods of designing ICs suchthat their performance, area, power consumption, yield or anycombination of these may be realized beyond the limits of current designmethods.

The comprehensive, relevant data produced by various embodiments of themethods described herein may be used to optimize the design of ICsemploying voltage scaling (including AVS). However, since the methodsherein may be carried out with reference to any set of relevant corners,the methods can also support the optimization of ICs that do not usevoltage scaling, i.e., have a fixed drive voltage. Before describingvarious embodiments of the novel methods of standardized data creation,analysis and comparison of semiconductor technology nodecharacteristics, various aspects of IC operation will be described,particularly with respect to ICs that do not and do employ voltagescaling and ICs that employ AVS.

FIG. 1 is a graph of device drive voltage and device speed showing, inparticular, traditional PVT corners with respect to an IC not employingvoltage scaling. FIG. 1 shows a “slow” corner 110 in which processvariations are assumed to yield relatively slow-switching devices, anddrive voltage and operating temperature are such that device switchingspeeds are their slowest. FIG. 1 also shows a “fast” corner 120 in whichprocess variations are assumed to yield relatively fast-switchingdevices, and drive voltage and operating temperature are such thatdevice switching speeds are their highest. The corners 110, 120represent extremes. Setup violations result from signals propagating tooslowly and arriving too late for subsequent use and are most likely tooccur at the slow corner 110. Hold violations result from signalspropagating too quickly and arriving too soon to be sustained forsubsequent use and are most likely to occur at the fast corner 120.Conventional timing analysis is performed at the slow and fast corners110, 120, since they represent the greatest challenge to IC operation.

It has also been determined that ICs operating with voltage scaling neednot be subjected to timing analysis at the slow and fast corners 110,120. Voltage scaling renders the slow and fast corners 110, 120irrelevant. An IC employing voltage scaling (and particularly AVS) doesnot operate in these corners. Instead, as will be shown, other cornersbound the operation of an IC employing voltage scaling. As stated above,it has been realized that the method by which an IC is designed may bemodified to take advantage of this fact. Instead of selecting circuitconfigurations (e.g., architectures and datapath widths) and devices andclosing timing at the slow and fast corners 110, 120, the IC designprocess can instead focus on more fundamental design objectives: power,performance, area, yield or any combination of these.

FIG. 2 is a graph of device drive voltage and device speed showing, inparticular, corners relevant to voltage scaling. FIG. 2 shows a firstcorner 210 in which process variations are assumed to yield relativelyslow-switching devices, and temperatures are such that device switchingspeeds are at their slowest. However, under such conditions, voltagescaling compensates for this inadequate speed by setting drive voltageat its highest level, increasing speed to an acceptable level. FIG. 2also shows a second corner 220 in which process variations are assumedto yield relatively fast-switching devices, and temperatures are suchthat device switching speeds are at their highest. However, under suchconditions, voltage scaling compensates for this excessive speed bysetting drive voltage at its lowest level, decreasing speed to anacceptable level. Given OCV and temperature variations over the area ofan IC, a region 230 results. It has been determined that IC designefforts are best spent on optimizing performance in the region 230. Inone embodiment, IC design efforts are focused exclusively in the region230.

The method introduced herein can also be applied in a reduced riskmanner by creating extended safe-zones of operation. In addition, AVScan be employed to introduce over-drive (e.g., to about 110% V_(DD)) andunder-drive (e.g., to about 90% V_(DD)). Of course, other ranges ofover- and under-drive may be employed in alternative embodiments.Furthermore, over- and under-drive need not be the same. AVS gives theIC designer the ability to choose a desired optimization target in asafe-zone as will now be shown.

FIG. 3 is a graph of device drive voltage and device speed showing, inparticular, performance failure, hold/hazard failure and safe operatingzones for an IC employing voltage scaling. FIG. 3 shows the first andsecond corners 210, 220 of FIG. 2. FIG. 3 also shows third and fourthcorners 300, 310. The third corner 300 represents a nominal drivevoltage V_(DD) applied to an IC in which process variations are assumedto yield relatively slow-switching devices and temperatures are suchthat device switching speeds are at their slowest. The fourth corner 310represents a nominal drive voltage V_(DD) applied to an IC in whichprocess variations are assumed to yield relatively fast-switchingdevices and temperatures are such that device switching speeds are attheir highest. A span 320 represents a range oL over-drive, and a span330 represents a range of under-drive. Thus, the first, second, thirdand fourth corners 210, 220, 300, 310 define a safe zone 340 ofoperation for an IC within which AVS is capable of scaling drive voltageto maintain proper IC operation.

A performance failure zone 350 lies below the safe zone 340 andencompasses operating conditions in which setup failures would occur. Ahold/hazard failure zone 360 lies above the safe zone 340 andencompasses operating conditions in which hold failures would occur. Anoperating line 370 representing the points of actual operation of aparticular IC lies within the safe zone 340 and is, as expected, boundedon its ends by the first and second corners 210, 220. The operating line370 divides the safe zone 340 into a lower, performance margin zone 380and an upper, hold/hazard margin zone 390. The lower, performance marginzone 380 represents a margin by which the operating line 370 isseparated from the performance failure zone 350. This margin comes atthe cost of performance: performance is lower, and power and area arehigher, than optimal. The upper, hold/hazard margin zone 390 representsa margin by which the operating line 370 is separated from thehold/hazard failure zone 360. This margin comes at the cost ofadditional buffering needed to hold signals pending subsequent use.

The graph of FIG. 3 reveals several aspects of optimization that may beexploited. First, as an upwardly pointing arrow to the right of thegraph of FIG. 3 indicates, the performance of the IC may be increased,or the area of the IC may be decreased, by reducing the performancemargin zone 380. Second, as a downwardly pointing arrow to the right ofthe graph of FIG. 3 indicates, the power consumed by the IC may bedecreased by reducing the hold/hazard margin zone 390. Consequently,optimizing the design of an IC in terms of performance, power and areaamounts to minimizing the width (indicated by a line 395) of the safezone 340. As a result, power consumption may be reduced (fast devicescan operate at a lower drive voltage), smaller cells (of less area) maybe used, further reducing power consumption to meet the same performance(slow devices can operate at a higher drive voltage), and theperformance of the IC can be increased by avoiding the slow corner 110of FIG. 1, allowing the IC to be run faster than previously (slowdevices can operate at a higher drive voltage). Furthermore, IC designand test time (“turn-around-time”) can be decreased due to reduced CADtool run-times and ease in achieving existing performance requirements.Process variations may also be reduced, and yields increased, in ICdesigns implemented at non-worst-case corners.

The challenge in any optimization is avoiding local optimizations. Inother words, the optimization should be with respect to as manyalternatives as possible. In the context of the above-describedoptimization opportunity, optimizing the design of an IC in terms ofperformance, power, area and yield is best carried out with respect tomultiple technology nodes. Important to this objective is a techniquefor gathering, analyzing and presenting standardized data such that thetechnology nodes are comparable.

FIG. 4 is a flow diagram of one embodiment of a method of standardizeddata creation, analysis and comparison of semiconductor technology nodecharacteristics. The method begins in a start step 405. In a step 410,representative benchmark circuits are designed to represent a typicalclock path, a typical data path and a typical flip-flop path. In eachcase, interconnects couple various devices, e.g., to model thedegradation in signal transition due to changes in the RC time-constantassociated with the interconnect resulting from either or both oftemperature and process variations. In the particular case of aflip-flop path, the devices are coupled such that they form at least oneflip-flop, and clock signals are used to step data through the flip-floppath. In the illustrated embodiment, each of the benchmark circuitsinclude variations in drive strength and loading (both gate andinterconnect) to cover several cases. Table 1, below, sets forthexamples of clock, data and flip-flop paths that was used to producegraphs set forth in FIGS. 5 and 6, below.

TABLE 1 Examples of Clock, Data and Flip-Flop Paths Benchmark CircuitTarget Circuit Details Strength Loads Libraries Clock Path in X2gate-load, P and D ->clkinv_1 wires: 5 u, ->clkinv_2 20 u, 50 u -> . . .X8 gate-load, ->clkinv_10 wires: 5 u, ->out 20 u, 200 u Data Path in X1gate-load, ->inv wires: 5 u, ->nor3 20 u, 50 u ->oai21 X8 gate-load,->nand2 wires: 5 u, ->nor2 20 u, 200 u ->nand3 ->aoi21 ->inv ->buf ->outFlip-Flop (in, clk) X1 gate-load, P only (flip- Path ->flop wires: 5 u,flops not ->buf 20 u, 50 u available in ->out X4 gate-load, D) wires: 5u, 20 u, 200 u

In a step 415, standard sensitization and measurement rules for delayand power are established across the benchmarks, across the corners andover the technology nodes that are to be considered as alternatives forIC design. For example, a standard sensitization may call for arepetitive pulse having a 50% duty cycle and a 16 nm period and aflip-flop clock period of 8 ns, and a standard measurement may call formeasurement of performance and power consumption (leakage and dynamic).In a step 420, a simulation is performed by sweeping through a range ofvalues and at predetermined intervals from each corner to the others. Inthe illustrated embodiment, the sweep is full, performed from oneexpected corner to the other. For example, process variables may beswept from, for example, slow (hss), through typical (htt), to fast(hff), resulting in three steps; drive voltage may be swept from −20% ofnominal V_(DD) to +20% of nominal V_(DD) in 10 mV steps, resulting in,e.g., 400 steps if nominal V_(DD)=1.00V; and temperature may be sweptfrom −40° C. to +135° C. in 5° C. steps, resulting in 20 steps. As aresult, 24,000 points of data are gathered from the example simulation.In the context of an IC that does not employ voltage scaling, sweepingmay occur from a slow corner to a fast corner (e.g., the slow and fastcorners 110, 120 of FIG. 1). In the context of an IC that does employvoltage scaling (including AVS), sweeping may occur among variouscorners that define a safe zone (e.g., the safe zone 340 of FIG. 3).

In many practical applications, far more than one simulation may beperformed. For example, more than 1000 simulations may be performed tocollect data on each technology node using only three process points pernode. The number of simulations can be much higher were skewed processpoints to be used. Computer programming may be used along withconventional CAD simulation tools to carry out automated circuitgeneration, multiple simulations, automated parsing, automateddatabanking and automated report/plot generation. The reports describedherein are only examples of the many different kinds of reports that canbe generated.

In a step 425, the data are extracted from the simulation and written toa databank. The databank may take any form whatsoever. In oneembodiment, the number of simulations required for benchmarking areextremely large, and considerable computer-aided automation (viaprogramming) is carried out to generate and consolidate the databank. Ina step 430, the data are parsed and interpreted as needed to producereports that may take various forms. For example, in a step 435, a 3Danalysis and contour plots may be produced from the data. One embodimentemploys considerable computer-aided automation to generate plots fromthe databank. In a step 440, a 2D analysis may be performed on the data.In a step 445, tables may be formed of extracted data. The method endsin an end step 450.

Having described various embodiments of a method of standardized datacreation, analysis and comparison of semiconductor technology nodecharacteristics, examples of contour plots illustrating examples of datawill now be described.

FIG. 5 is a pair of contour plots for one example of a device fabricatedaccording to 65 nm and 40 nm technology nodes, respectively. Comparinghighlighted areas 510, 530 indicates an increased contour density at the65 nm technology node and therefore a higher drive voltage sensitivity.A highlighted area 530 indicates an approximately 57% increase inperformance as drive voltage increases from −10% of nominal V_(DD) to+10% of nominal V_(DD). A comparison of contour slopes 540, 550 revealstemperature inversion and drive voltage sensitivity at the 40 nmtechnology node. A highlighted area 560 indicates an approximately 82%increase in performance as drive voltage increases from −10% of nominalV_(DD) to +10% of nominal V_(DD). These facts provide insights regardingthe relative advantages and disadvantages of selecting devices in the 65nm versus the 40 nm technology node that conventional, ad-hoc techniquesfor analyzing the characteristics of different technology nodes fail toreveal.

FIG. 6 is a set of contour plots of high, typical and low thresholdvoltage devices at FF, TT and SS corners. HVT designates the highthreshold voltage devices, SVT designates the typical threshold voltagedevices, and LVT designates the low threshold voltage devices. Shown arecontours from which to gain an understanding of temperature and voltagesensitivity of these devices at the 45 nm technology node.

FIG. 7 is a flow diagram of one embodiment of a method of designing anIC employing voltage scaling that uses standardized data to gauge thedegree of optimization. The method begins in a start step 705. In a step710, performance objectives are determined. The performance objectivesmay be expressed in terms of a target data throughput, a target clockfrequency, a target die size, a target overall power consumption, atarget yield percentage or any other conventional or later-determinedperformance objective. In a step 715, an optimization target voltage isdetermined. For example, a particular IC design may have an optimizationtarget voltage of 1.7V. However, all optimization target voltages arewithin the scope of the invention. In a step 720, a decision is made asto whether voltage scaling is needed. The performance objectives definedabove may be such that additional voltage scaling (or AVS) circuitry maynot be needed. If voltage scaling is not needed, a conventional ICdesign method may then be employed.

However, the flow diagram of FIG. 7 assumes that voltage scaling isneeded. In a step 725, a decision is made as to whether the voltagescaling is to be static (non-AVS) or adaptive (AVS). The result of thedecision of the step 725 determines the PVT corners and libraries thatare to be used in generating a netlist. In a step 730, a functional ICdesign and a register transfer logic (RTL representation) representationof that IC design are generated. Those skilled in the pertinent artunderstand how to generate a functional IC design and an RTLrepresentation based thereon.

In a step 735, the RTL representation is synthesized to yield a netlistusing the optimization target voltage. The synthesis is performed withreference to standardized data, created by employing one of theabove-described embodiments, to judge optimization. Those skilled in thepertinent art are familiar with the construction and content oflibraries of IC devices in general and are aware that such librariescontain standard implementations, along with physical attributes, ofdevices that can be implemented in an IC. Some attributes are largelyindependent of fabrication process variation, including the numbers andlocations of device terminals, the shape and size of the devicefootprint and the numbers and types of process steps that should beundertaken to fabricate the device and process-dependent attributes.Other attributes vary, such as the switching speed of the device (if itis a transistor), the drive voltage of the device, the current-handlingcapability of the device and the power consumption of the device. Asdescribed above, the process-dependent attributes of the library aredetermined with reference to PVT corners; the PVT corners of a libraryemployed to design an IC that implements voltage scaling are differentfrom those of a conventional library. In general, since voltage scalingrenders conventional, more extreme, PVT corners irrelevant, designmargins can be relaxed, and greater flexibility exists with respect tothe selection of devices to be used in an IC.

During the synthesis of the RTL representation into the netlist,fundamental decisions may be made regarding the architecture of the IC,including its logic circuits. Those skilled in the pertinent artunderstand that logic circuits may be optimized in different ways. An ICmay need to perform a multiply function. However, that multiply functionmay be implemented with different multiplier architectures. Multipliershaving wide datapaths (parallel units) may be faster but consume morepower and area than multipliers having narrower datapaths (e.g., asingle unit with intermediate result feedback). The RTL representationmay be generated with reference to a library containing more than onearchitecture for various logic circuits, and choices among thosearchitectures may be made based on the greater latitude afforded bystatic voltage scaling or AVS.

In a step 740, devices are placed, a clock tree is synthesized, androuting is determined according to the RTL representation and at theoptimization target voltage. In a step 745, a timing signoff isperformed at the optimization target voltage. Those skilled in thepertinent art understand how to perform timing signoff at a given drivevoltage. The method ends in an end step 750.

Those skilled in the art to which this application relates willappreciate that other and further additions, deletions, substitutionsand modifications may be made to the described embodiments.

1. A method of standardized data creation and analysis of semiconductortechnology node characteristics, comprising: designing at least onerepresentative benchmark circuit; establishing standard sensitizationand measurement rules for delay and power for said at least onerepresentative benchmark circuit and across corners in said technologynodes; performing a simulation by sweeping through a range of values andat predetermined intervals across said corners; extracting data fromsaid simulation; and parsing and interpreting said data to produce atleast one report.
 2. The method as recited in claim 1 wherein saidrepresentative benchmark circuit is configured to represent one selectedfrom the group consisting of: a clock path, a data path, and a flip-floppath.
 3. The method as recited in claim 1 wherein said sweeping occursbetween slow and fast corners.
 4. The method as recited in claim 1wherein said sweeping occurs among various corners that define a safezone.
 5. The method as recited in claim 1 further comprising writingsaid data to a databank.
 6. The method as recited in claim 1 whereinsaid at least one report is selected from the group consisting of: a 3Danalysis and contour plot, a 2D analysis, and a tables formed of saiddata.
 7. The method as recited in claim 1 wherein said technology nodeis selected from the group consisting of: a scale of a process employedto fabricate an integrated circuit, a substrate material employed insaid integrated circuit, an interconnect material employed in saidintegrated circuit, and a device type employed in said integratedcircuit.
 8. A method of standardized data creation and analysis ofsemiconductor technology node characteristics, comprising: designingrepresentative benchmark circuits for a clock path, a data path and aflip-flop path; establishing at least one standard sensitization andmeasurement rule for delay and power for said representative benchmarkcircuits and across corners in said technology nodes; performing asimulation by sweeping through a range of values and at predeterminedintervals across said corners; extracting data from said simulation;writing said data to a databank; and parsing and interpreting said datato produce at least one report.
 9. The method as recited in claim 8wherein each of said representative benchmark circuits includesvariations in drive strength, gate loading and interconnect loading. 10.The method as recited in claim 8 wherein said sweeping occurs betweenslow and fast corners.
 11. The method as recited in claim 8 wherein saidsweeping occurs among various corners that define a safe zone.
 12. Themethod as recited in claim 8 wherein said at least one report isselected from the group consisting of: a 3D analysis and contour plot, a2D analysis, and a tables formed of said data.
 13. The method as recitedin claim 8 wherein said technology node is selected from the groupconsisting of: a scale of a process employed to fabricate an integratedcircuit, a substrate material employed in said integrated circuit, aninterconnect material employed in said integrated circuit, and a devicetype employed in said integrated circuit.
 14. A method of designing anintegrated circuit, comprising: generating a functional design for saidintegrated circuit; determining performance objectives for saidintegrated circuit; determining an optimization target voltage for saidintegrated circuit; determining whether said integrated circuit needsvoltage scaling to achieve said performance objectives at saidoptimization target voltage and, if so, whether said integrated circuitis to employ static voltage scaling or adaptive voltage scaling; usingsaid optimization target voltage to synthesize a layout from saidfunctional integrated circuit design that meets said performanceobjectives by employing standardized data created by designing at leastone representative benchmark circuit, establishing standardsensitization and measurement rules for delay and power for said atleast one representative benchmark circuit and across corners in saidtechnology nodes, performing a simulation by sweeping through a range ofvalues and at predetermined intervals across said corners, extractingdata from said simulation, and parsing and interpreting said data toproduce at least one report; and performing a timing signoff of saidlayout at said optimization target voltage.
 15. The method as recited inclaim 14 wherein said using comprises: using said optimization targetvoltage to synthesize a netlist from said functional integrated circuitdesign that meets said performance objectives; and generating a layoutof said integrated circuit from said netlist.
 16. The method as recitedin claim 14 wherein said performance objectives include one selectedfrom the group consisting of: a target power consumption, a target area,and a target speed.
 17. The method as recited in claim 14 wherein saidusing comprises: synthesizing a clock tree for said integrated circuit;and determining a routing at said optimization target voltage.
 18. Themethod as recited in claim 14 wherein said determining whether saidintegrated circuit needs said voltage scaling is carried out withrespect to more than one fabrication technology, said performance/powerratio being unitless.
 19. The method as recited in claim 14 wherein saidadaptive voltage scaling is capable of being carried out withoutsoftware control.
 20. The method as recited in claim 14 wherein saidusing comprises decreasing an area of a safe zone associated with saidintegrated circuit.